1 µm process

The 1 μm process refers to the level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

Semiconductor
device
fabrication
MOSFET scaling
(process nodes)
Future

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]

Products featuring 1.0 μm manufacturing process
  • NTT introduced the 1 μm process for its DRAM memory chips, including its 64 kbit chip in 1979 and 256 kbit chip in 1980.[4]
  • NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.[5]
  • Intel 80386 CPU launched in 1985 was manufactured using this process.[6]
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References
  1. Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 2015-04-27. Retrieved 2012-05-11.
  2. Myslewski, R (2011-11-15). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 2015-04-27. Retrieved 2015-04-19.
  3. Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. doi:10.1109/JSSC.1974.1050511.
  4. Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). CORE. Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019.
  5. "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
  6. Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 2015-04-27. Retrieved 2012-05-11.
Preceded by
1.5 μm process		 MOSFET semiconductor device fabrication process Succeeded by
800 nm process


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