Medard W. Welch Award

The Medard W. Welch Award is given to scientists who demonstrated outstanding research in the fields pertinent to American Vacuum Society. It was established in 1969 in memory of Medard W. Welch, a founder of the American Vacuum Society.[1]

List of recipients

Year Recipient Citation
2019 Scott A. Chambers “For pioneering contributions to understanding the origin and influence of heterogeneities, defects, and disorder in complex oxide epitaxial films and heterostructures"
2018 David Castner “For leading advances in rigorous and state-of-the-art surface analysis methods applied to organic and biological samples"
2017 Hans-Peter Steinrück "For his pioneering studies on the properties and reactivity of the surfaces of ionic liquids employing the methods of surface science"
2016 Maki Kawai "For elucidation of the role of vibrational dynamics in single-molecule reactions at surfaces"
2015 Charles T. Campbell “For seminal contributions to determining accurate adsorption energetics and for developing key concepts for the analysis of important catalytic reactions"
2014 Patricia Thiel “For seminal contributions to the understanding of quasicrystalline surfaces and thin-film nucleation and growth”
2013 Chris G. Van de Walle "For seminal contributions to the theory of heterojunctions and its applications to semiconductor technology, and for elucidating the role of hydrogen in electronic materials."
2012 Yves Chabal "For his exceptional studies of vibrations at surfaces, especially the development and application of surface infrared spectroscopy to understand the physics and chemistry of hydrogen-terminated silicon and atomic layer deposition"
2011 Wilson Ho "For the development and application of atomic scale inelastic electron tunneling with the scanning tunneling microscope."
2010 Mark J. Kushner "For outstanding contributions to modeling and physical understanding of plasmas, especially those used in thin film etching, deposition and surface modification."
2009 Robert Hamers "For wide ranging studies of chemistry and photochemistry at semiconductor surfaces and for establishing connections to various emergent technologies."
2008 Miquel Salmeron "For seminal contributions to the development of surface characterization techniques usable in a variety of environments and their application to catalysis, tribology and related surface phenomena."
2007 Jerry Tersoff “for seminal theoretical contributions to the understanding of surfaces, interfaces, thin films and nanostructures of electronic materials.”
2006 John C. Hemminger "For outstanding contributions to the development of quantitative, molecular level understanding of many important interfacial processes, especially those related to atmospheric chemistry."
2005 Charles S. Fadley "For the development of novel techniques based on photoelectron spectroscopy and synchrotron radiation, and their application to the study of the atomic, electronic, and magnetic structure of surfaces and buried interfaces."
2004 Rudolf M. Tromp "For fundamental discoveries in epitaxial growth and elucidation of their applications to technological problems."
2003 Matthias Scheffler "For developing Density Functional Theory methods to describe surface chemical reactions and enabling their widespread use."
2002 Buddy D. Ratner "For innovative research on biomaterial interfaces and establishing the field of biomaterials surface science."
2001 Ward Plummer "For the development of novel instrumentation, its use to illuminate new concepts in the surface physics of metals, and the mentoring of promising young scientists."
2000 D. Phillip Woodruff "For contributions to the understanding of the geometric properties of clean and adsorbate-decorated surfaces, and for innovative development of surface science techniques."
1999 John H. Weaver "For his seminal contributions to the atomic-level understanding of thin-film growth, interfacial interactions, and etching."
1998 David E. Aspnes "For novel applications and creative development of optical methods and effects for research on thin films, surfaces and interfaces which have significantly advanced the understanding of electronic materials and processes."
1997 Phaedon Avouris "For his seminal contributions to the understanding of the chemistry of semiconductor surfaces and for his development of the STM as a tool for probing and inducing surface chemical reactions with atomic scale resolution and control."
1996 Peter Feibelman "For his insightful predications and explanations of surface phenomena based on first principles calculations.
1995 Gerhard Ertl "For excellence in the use of modern methods for developing key concepts important to surface chemistry."
1994 John T. Yates, Jr. "For the development and use of modern measurement methods to provide insights into the behavior of chemisorbed species on metal and semiconductor surfaces."
1993 George Comsa "For seminal discoveries and investigations in vacuum and surface science, in particular the extensive development of thermal-energy atom scattering for the structural analysis of surfaces."
1992 Ernst G. Bauer "For his contributions to the fundamental understanding of thin film nucleation and growth and for his invention, development and use of multiple surface characterization techniques to study those thin films."
1991 Max G. Lagally "For outstanding contributions to the quantitative understanding of defects with respect to ordering and growth of surface structures."
1990 Jerry M. Woodall "For seminal contributions to compound semiconductor science and technology."
1989 Robert Gomer "For pioneering contributions to surface science, including definitive studies on the theory and application of field emission, chemisorption, and desorption phenomena."
1988 Peter Sigmund "For theoretical contributions to the field of physical sputtering and related phenomena."
1987 Mark J. Cardillo "For his innovative and pioneering research on the interaction of molecular beams with surfaces."
1986 Harald Ibach "For the development of high resolution electron energy loss spectroscopy and its applications to the characterization of surfaces and absorbates."
1985 Theodore E. Madey "For his investigations of surface processes at a fundamental atomic and molecular level, especially the determination of absorbed molecule bonding geometries."
1984 William E. Spicer "For his contributions to the development and application of photoelectron spectroscopy in the study of the electronic structure and chemical properties of solids and their surfaces and interfaces."
1983 H. H. Wieder "For his contributions to growth of thin semiconductor single crystal films, and most importantly, for research leading toward III-V MOS technology."
1981 Harrison E. Farnsworth "For his pioneering studies of the preparation, structural characterization, and properties of atomically clean surfaces."
1979 Gert Ehrlich "For contributions to our understanding of the microscopic force laws by which atoms residing on solid surfaces interact with the substrate and with each other."
1978 Georg H. Hass "For techniques of preparation and characterization of thin films for optical coatings of importance to solar energy, space technology, and electro-optics."
1977 Charles B. Duke "For far-reaching theoretical contributions to surface science and solid state physics in the areas of low energy electron diffraction, electron tunneling and the electronic structure of large organic molecules."
1976 Leslie Holland "In recognition of his many important contributions to vacuum technology and to thin film and surface sciences."
1975 Paul A. Redhead "In recognition of his distinguished contributions to the science of low pressure measurement and his far-reaching research on the properties and behavior of absorbed species."
1974 Homer D. Hagstrum "For pioneering contributions to ultrahigh vacuum studies of solid surfaces, especially the incorporation into a single vacuum chamber of multiple experimental measurements oncontrolled, individual surfaces; the development of an experimental technique to measure with high precision the energy distribution of electrons ejected from surfaces by the neutralization of slow ions; and the conversion of this technique into aspectroscopy of the electronic structure of well-characterized solid surfaces by virtue of his elucidation of the nature of the physical mechanism of this neutralization process."
1973 Lawrence A. Harris "For his pioneering work in the field of Auger electron spectroscopy. Harris was responsible for the key publication recognizing the potential of Auger electron spectroscopy as a surface analytical tool which he developed and demonstrated. His contribution has had far-reaching impact on the field of surface science and related technical activities."
1972 - Kenneth C.D. Hickman "For his contributions in the development of condensation pumps and their working fluids and, in particular, for his discovery of the self-fractionating principle which has made these pumps possible."
1971 Gottfried K. Wehner "For his pioneering work in the field of sputtering, which has profoundly influenced many other scientists and engineers."
1970 Erwin Wilhelm Müller "For work including the development of field electron and field ion microscopy."
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See also

References

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