Rzhanov Institute of Semiconductor Physics
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS (Russian: Институт физики полупроводников имени А. В. Ржанова СО РАН) is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.
 | |
| Founder(s) | Anatoly Rzhanov |
|---|---|
| Established | 1964 |
| Director | Alexander Latyshev |
| Owner | Siberian Branch of RAS |
| Location | , |
| Address | Lavrentyev Prospekt 13, Novosibirsk, 630090, Russia |
| Website | www |
History
The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics.[1]
In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.[1]
Scientific activity
Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.[2]
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References
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