Diana Huffaker

Diana Huffaker FIEEE, FOSA is a physicist working in compound semiconductors optical devices. She is the current Sêr Cymru Chair in Advanced Engineering and Materials and Science Director of the Institute of Compound Semiconductors is based within Cardiff University. Her work includes compound semiconductor epitaxy, lasers, solar cells, optoelectronic devices, plasmonics, and Quantum dot and nanostructured materials.

Diana Huffaker
Alma materUniversity of Texas, Austin
Scientific career
Fieldsepitaxy, optoelectronic devices, plasmonics, Quantum dot and nanostructured
InstitutionsCardiff University

Research and career

Prior to moving to Cardiff University in 2015,[1] Huffaker was Professor in Electrical Engineering and Director of the Integrated Nanomaterials Laboratory at the University of California, Los Angeles (UCLA).

Highly Cited Papers
  • Huffaker, D. L., Deppe, D. G., Kumar, K., & Rogers, T. J. (1994). Native‐oxide defined ring contact for low threshold vertical‐cavity lasers. Applied Physics Letters, 65(1), 97–99. doi:10.1063/1.113087[2]
  • Huffaker, D. L., & Deppe, D. G. (1998). Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots. Applied Physics Letters, 73(4), 520–522. doi:10.1063/1.121920[3]
  • Huffaker, D. L., Park, G., Zou, Z., Shchekin, O. B., & Deppe, D. G. (1998). 1.3 μm room-temperature GaAs-based quantum-dot laser. Applied Physics Letters, 73(18), 2564–2566. doi:10.1063/1.122534[4]
  • Gyoungwon Park, Shchekin, O. B., Huffaker, D. L., & Deppe, D. G. (2000). Low-threshold oxide-confined 1.3-μm quantum-dot laser. IEEE Photonics Technology Letters, 12(3), 230–232. doi:10.1109/68.826897[5]
  • Huang, S. H., Balakrishnan, G., Khoshakhlagh, A., Jallipalli, A., Dawson, L. R., & Huffaker, D. L. (2006). Strain relief by periodic misfit arrays for low defect density GaSb on GaAs. Applied Physics Letters, 88(13), 131911. doi:10.1063/1.2172742[6]
  • Laghumavarapu, R. B., Moscho, A., Khoshakhlagh, A., El-Emawy, M., Lester, L. F., & Huffaker, D. L. (2007). GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response. Applied Physics Letters, 90(17), 173125. doi:10.1063/1.2734492[7]

Awards and honours
  • The Optical Society, Fellow, 2014[8]
  • SPIE, Nanoengineering Pioneer Award, 2010
  • Creative Awards, Most Valuable Patent, 2009
  • DoD, National Security Science and Engineering Faculty Fellow (NSSEFF), 2008
  • IEEE, Fellow, 2008
  • Alexander Von Humboldt Fellowship, 2004
gollark: In very small quantities.
gollark: If it can't really avoid that, it's its fault.
gollark: `If I add thermal transport, everyone will use those and nothing else` doesn't make sense given you adding EIO.
gollark: Its item transport overshadows all else.
gollark: You can say the same for EIO.

References
  1. "Diana Huffaker joins Cardiff University to lead research lab". BBC. 26 May 2015. Retrieved 8 October 2018.
  2. Huffaker, D. L.; Deppe, D. G.; Kumar, K.; Rogers, T. J. (1994-07-04). "Native‐oxide defined ring contact for low threshold vertical‐cavity lasers". Applied Physics Letters. 65 (1): 97–99. doi:10.1063/1.113087. ISSN 0003-6951.
  3. Huffaker, D. L.; Deppe, D. G. (1998-07-27). "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots". Applied Physics Letters. 73 (4): 520–522. doi:10.1063/1.121920. ISSN 0003-6951.
  4. Huffaker, D. L.; Park, G.; Zou, Z.; Shchekin, O. B.; Deppe, D. G. (1998-11-02). "1.3 μm room-temperature GaAs-based quantum-dot laser". Applied Physics Letters. 73 (18): 2564–2566. doi:10.1063/1.122534. ISSN 0003-6951.
  5. Gyoungwon Park; Shchekin, O.B.; Huffaker, D.L.; Deppe, D.G. (2000). "Low-threshold oxide-confined 1.3-μm quantum-dot laser". IEEE Photonics Technology Letters. 12 (3): 230–232. doi:10.1109/68.826897. ISSN 1041-1135.
  6. Huang, S. H.; Balakrishnan, G.; Khoshakhlagh, A.; Jallipalli, A.; Dawson, L. R.; Huffaker, D. L. (2006-03-27). "Strain relief by periodic misfit arrays for low defect density GaSb on GaAs". Applied Physics Letters. 88 (13): 131911. doi:10.1063/1.2172742. ISSN 0003-6951. S2CID 120236461.
  7. Laghumavarapu, R. B.; Moscho, A.; Khoshakhlagh, A.; El-Emawy, M.; Lester, L. F.; Huffaker, D. L. (2007-04-23). "GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response". Applied Physics Letters. 90 (17): 173125. doi:10.1063/1.2734492. ISSN 0003-6951.
  8. "2014 Fellows of the Optical Society of America". Retrieved 18 September 2019.
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