C. Frank Wheatley Jr.

C. Frank Wheatley Jr. (1927, Baltimore, Maryland – October 18, 2014) was an electrical engineer responsible for a number of innovations within the semiconductor industry, including the patent of the insulated-gate bipolar transistor (IGBT).[1][2] His work within the semiconductor industry garnered him a variety of awards, including his induction into the New Jersey Inventors Hall of Fame[3] and election as an IEEE Fellow.[4]

Awards

The University of Maryland inducted Wheatley into the Hall of Fame of the A. James Clark School of Engineering.[2]  He has also received three awards from RCA, four from Harris Corporation, and five from the IEEE.[5]

Publications

His most cited publications, according to Google Scholar, are:[6]

  • CTitus JL, Wheatley CF. Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs. IEEE Transactions on Nuclear Science. 1996 Apr;43(2):533-45. (cited 154 times)
  • Brews JR, Allenspach M, Schrimpf RD, Galloway KF, Titus JL, Wheatley CF. A conceptual model of a single-event gate-rupture in power MOSFETs. IEEE transactions on nuclear science. 1993 Dec;40(6):1959-66. (cited 89 times)
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References
  1. "RCA Transistor Oral History Wheatley Index". semiconductormuseum.com. Retrieved 2020-01-15.
  2. "C. Frank Wheatley, Jr. | A. James Clark School of Engineering, University of Maryland". eng.umd.edu. Retrieved 2020-01-15.
  3. "2013 Awardees". NJ Inventors Hall of Fame 2018. Retrieved 2020-01-15.
  4. Titus JL, Wheatley CF, Gillberg JE, Burton DI. A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems]. IEEE Transactions on Nuclear Science. 2001 Dec;48(6):1879-84.
  5. "In Memoriam". IEEE Transactions on Nuclear Science. 61 (6): 2817. December 2014. Bibcode:2014ITNS...61.2817.. doi:10.1109/TNS.2014.2372823. ISSN 1558-1578.
  6. "CFWheatley". WorldCat. Retrieved February 4, 2020.


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